当前位置:首页 >> 解密信息 >> 芯片解密

MC33182P单片机开发分析与解密

时间:2012-07-04 08:51:34

单片机解密过程中,对芯片内部结构及其加解密特征进行技术分析是解密工程师的一项必修课,只有充分理解单片机内部结构原理等信息,工程师才能准确进行方案开发,确定最可靠、成功率最高的芯片解密方案,最大限度确保解密项目的安全可靠。
如需了解更多IC解密等技术资料欢迎咨询世纪芯
Quality bipolar fabrication with innovative design concepts are employed for the MC33181/2/4, MC34181/2/4 series of monolithic operational
amplifiers. This JFET input series of operational amplifiers operates at 210 ?A per amplifier and offers 4.0 MHz of gain bandwidth product and
10 V/?s slew rate. Precision matching and an innovative trim technique of the single and dual versions provide low input offset voltages. With a JFET input stage, this series exhibits high input resistance, low input offset voltage and high gain. The all NPN output stage, characterized by no deadband crossover distortion and large output voltage swing, provides high capacitance drive capability, excellent phase and gain margins, low open loop high frequency output impedance and symmetrical source/sink AC frequency response.
·Low Supply Current: 210 μA (Per Amplifier)
·Wide Supply Operating Range: ±1.5 V to ±18 V
·Wide Bandwidth: 4.0 MHz
·High Slew Rate: 10 V/μs
·Low Input Offset Voltage: 2.0 mV
·Large Output Voltage Swing: –14 V to +14 V (with ±15 V Supplies)
·Large Capacitance Drive Capability: 0 pF to 500 pF
·Low Total Harmonic Distortion: 0.04%
·Excellent Phase Margin: 67°
·Excellent Gain Margin: 6.7 dB
·Output Short Circuit Protection
·Offered in New TSSOP Package Including the Standard SOIC and DIP Packages
世纪芯为广大客户提供准确快速的芯片解密及程序烧录服务。请联系咨询了解详情

解密技术
解密问题
芯片解密