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RFP70N06芯片内部程序提取与解密

时间:2012-05-10 09:08:23

芯片解密过程中,对芯片内部结构及其加解密特征进行技术分析是解密工程师的一项必修课,因为只有充分理解芯片内部结构原理等技术信息,工程师才能准确进行方案开发,确定最可靠、成功率最高的解密方案,最大限度确保解密项目的安全可靠。此芯片其性能特征简单介绍:
These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance.They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits.
Features
·70A, 60V
·rDS(on) = 0.014Ω
·Temperature Compensated PSPICE Model
·Peak Current vs Pulse Width Curve
·UIS Rating Curve (Single Pulse)
·175oC Operating Temperature
·Related Literature
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
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