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GAL16LV8芯片解密成功实例

时间:2011-03-18 09:38:40

单片机解密过程中,对芯片内部结构及其加解密特征进行技术分析是解密工程师的一项必修课,因为只有充分理解单片机内部结构原理等技术信息,工程师才能准确进行方案开发,确定最可靠、成功率最高的芯片解密方案,最大限度确保解密项目的安全可靠。
Features

·HIGH PERFORMANCE E CMOS  TECHNOLOGY
-(TM)3.5 ns Maximum Propagation Dela
-(TM)Fmax  = 250 MH
-(TM)2.5 ns Maximum from Clock Input to Data Outpu
·
Advanced CMOS Technology
-(TM)UltraMO
·3.3V LOW VOLTAGE 16V8 ARCHITECTURE
-(TM)JEDEC-Compatible 3.3V Interface Standar
-(TM)5V Compatible Input
-(TM)I/O Interfaces with Standard 5V TTL Device
(GAL16LV8C)
·ACTIVE PULL-UPS ON ALL PINS (GAL16LV8D Only)
CELL TECHNOLOGY
-(TM)Reconfigurable Logi
-(TM)Reprogrammable Cell
-(TM)100% Tested/100% Yield
-(TM)High Speed Electrical Erasure (<100ms
-(TM)20 Year Data Retentio
·EIGHT OUTPUT LOGIC MACROCELLS
-(TM)Maximum Flexibility for Complex Logic Design
-(TM)Programmable Output Polarit
·PRELOAD AND POWER-ON RESET OF ALL REGISTERS
-(TM)100% Functional Testabilit
·APPLICATIONS INCLUDE:
-(TM)Glue Logic for 3.3V System
-(TM)DMA Contro
-(TM)State Machine Contro
-(TM)High Speed Graphics Processin
-(TM)Standard Logic Speed Upgrad
·ELECTRONIC SIGNATURE FOR IDENTIFICATION
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