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AT28C010E芯片解密研究

时间:2010-12-23 09:25:01

单片机解密过程中,对芯片内部结构及其加解密特征进行技术分析是解密工程师的一项必修课,因为只有充分理解单片机内部结构原理等技术信息,工程师才能准确进行方案开发,确定最可靠、成功率最高的芯片解密方案,最大限度确保解密项目的安全可靠
The AT28C010 is a high-performance Electrically Erasable and Programmable Read Only Memory. Its one megabit of memory is organized as 131,072 words by 8 bits.Manufactured with Atmel's advanced nonvolatile CMOS technology, the device offersaccess times to 120 ns with power dissipation of just 440mW. When the device is deselected, the CMOS standby current is less than 300 uA.
 Features
· Fast Read Access Time - 120 ns
· Automatic Page Write Operation
Internal Address and Data Latches for 128-Bytes
Internal Control Timer
· Fast Write Cycle Time
Page Write Cycle Time - 10 ms Maximum
1 to 128-Byte Page Write Operation
· Low Power Dissipation
80 mA Active Current
300 uA CMOS Standby Current
· Hardware and Software Data Protection
· DATA Polling for End of Write Detection
· High Reliability CMOS Technology
Endurance: 104 or 105 Cycles
Data Retention: 10 Years
· Single 5V ± 10% Supply
· CMOS and TTL Compatible Inputs and Outputs
· JEDEC Approved Byte-Wide Pinout
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